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| MMBTSA1036 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSA1036 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=3V, -IC=100mA Current Gain Group P Q R Collector-base breakdown voltage at -IC=100A Collector-emitter breakdown voltage at -IC=1mA Emitter-base breakdown voltage at -IC=100A Collector Cutoff Current at -VCB=20V Emitter Cutoff Current at -VEB=4V Collector Saturation Voltage at -IC=300mA, -IB=30mA Transition Frequency at -VCE=5V, -IE=20mA, f=100MHz Collector Output Capacitance at -VCB=10V, f=1MHz Cob 7 pF fT 200 MHz -VCE(sat) 0.6 V -IEBO 1 A -ICBO 1 A hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO 82 120 180 40 32 5 180 270 390 V V V Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 |
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